Infineon Technologies OptiMOS™ 6 100V Power MOSFETs

Infineon Technologies OptiMOS™ 6 100V Power MOSFETs are offered in SuperSO8 and PQFN 3.3 x 3.3 packages, while optimized for high-switching-frequency applications such as telecom and solar, where losses are associated with charges (switching) and on-state resistance (conduction). Additionally, due to the best-in-class R_DS(on) and wider safe operating area (SOA), the device is also ideal for battery-powered applications (BPA) and battery management systems (BMS).

Compared to OptiMOS™ 5 technology, Infineon's leading thin wafer technology enables significant performance improvements – refer to the features below.

Features

Compared to previous generation / OptiMOS™ 5 technology:
- 18% lower R_DS(on) and wider SOA
- Significantly improved FOMs for increased efficiency:
  - FOM Q_g x R_DS(on) = -29%
  - FOM Q_gd x R_DS(on) = -42%
- Lower and softer reverse recovery charge (Q_rr)
Optimized for high-switching-frequency applications (e.g. solar, telecom)
System cost reduction thanks to the easier thermal design and less paralleling

MSL 1 classified according to J-STD-020
Beneficial price/performance ratio for high-switching-frequency applications (e.g. solar, telecom)
Low conduction losses
Low switching losses
Fast turn on and off
RoHS conform, lead-free