Kingbright NPN Si Phototransistors
Kingbright NPN Si Phototransistors are made with NPN silicon phototransistor chips. These phototransistors are mechanically and spectrally matched to infrared-emitting LED lamps. The NPN Si phototransistors operate at a temperature range from -40°C to +85°C. These phototransistors feature a maximum collector-to-emitter voltage of 30V and an emitter-to-collector voltage of 5V. Typical applications include infrared applied systems, optoelectronic switches, and photodetector control circuits.
Kingbright WP7113PD1BT/BD-P22 Photodiode is mechanically and spectrally matched to the infrared emitting LED lamp. This photodiode is made with silicon phototransistor chips. The WP7113PD1BT/BD-P22 photodiode features a power dissipation of 150mW and operates at a temperature range from -40°C to +85°C. Typical applications include infrared applied systems, optoelectronic switches, and photodetector control circuits.
Applications
- Infrared applied systems
- Optoelectronic switches
- Photodetector control circuits
- Sensor technology
Specifications
- 30V maximum collector-to-emitter voltage
- 5V maximum emitter-to-collector voltage
- -40°C to +85°C operating temperature range
Kingbright IR LEDs & Color/Photo Sensors
Kingbright IR LEDs & Color/Photo Sensors
GaAlAs/GaAs infrared emitting diodes and phototransistor/photodiode sensors.
Additional Resources
Published: 2018-05-07
| Updated: 2022-12-05