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ROHM Semiconductor RFC02MM2STR Super Fast Recovery Diode

ROHM Semiconductor RFC02MM2STR Super Fast Recovery Diode features low forward voltage, low capacitance, and high-speed switching. This recovery diode includes silicon epitaxial planar type construction. The RFC02MM2STR diode offers 200V repetitive peak reverse voltage, 1μA reverse current, and 10A non-repetitive forward surge current. This recovery diode operates at 0.75V to 0.95V forward voltage range when the forward current is 0.5A. The RFC02MM2STR super-fast recovery diode is ideal for use in general rectification.

Features

  • Low forward voltage
  • Silicon epitaxial planar construction type
  • Low capacitance
  • High-speed switching

Specifications

  • 200V repetitive peak reverse voltage
  • 1μA reverse current
  • 10A non-repetitive forward surge current
  • 0.75V to 0.95V forward voltage range @ IF = 0.5A
  • -55°C to 150°C storage temperature range
  • 150°C junction temperature

Applications

  • General rectification

Mechanical Drawings

Mechanical Drawing - ROHM Semiconductor RFC02MM2STR Super Fast Recovery Diode
Mechanical Drawing - ROHM Semiconductor RFC02MM2STR Super Fast Recovery Diode
Published: 2021-02-26 | Updated: 2022-03-11