IXFK120N30P3

IXYS
747-IXFK120N30P3
IXFK120N30P3

Mfr.:

Description:
MOSFETs N-Channel: Power MOSFET w/Fast Diode

Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
39 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
16,26 € 16,26 €
10,92 € 109,20 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-264-3
N-Channel
1 Channel
300 V
120 A
27 mOhms
- 20 V, 20 V
3 V
150 nC
- 55 C
+ 150 C
1.13 mW
Enhancement
HiPerFET
Tube
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Product Type: MOSFETs
Series: IXFK120N30
Factory Pack Quantity: 25
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 10 g
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Datasheet

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TARIC:
8541500000
CNHTS:
8541210000
USHTS:
8541290065
MXHTS:
85415001
BRHTS:
85415020
ECCN:
EAR99

PolarP3™ HiPerFET™ Power MOSFETs

IXYS PolarP3™ HiPerFET™ Power MOSFETs are the latest addition to the benchmark high-performance Polar-Series for the product portfolio between 300V, 500V, and 600V. The high Figure of Merit (FOM), which is the multiplication of Qg and RDS(on), provides an excellent alternative to weaker super junction technologies. These PolarP3 HiPerFETs demonstrate up to a 12% reduction in on-state resistance (Rdson), a 14 percent reduction in gate charge (Qg) and as high as a 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing the total power density of the device.

Gen1 Trench Gate Power MOSFETs

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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