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IXFN220N20X3

Name: IXYS IXFN220N20X3
Brand: IXYS
SKU: 747-IXFN220N20X3
Price: 30.62 EUR
Availability: InStock

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Mouser No:

747-IXFN220N20X3

Mfr. No:

IXFN220N20X3

Mfr.:

IXYS

Description:

MOSFET Modules MBLOC 200V 160A N-CH X3CLASS

Datasheet:

IXFN220N20X3 Datasheet

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In Stock: 443

Stock:: 443 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	30,62 €	30,62 €
	24,32 €	243,20 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFET Modules
RoHS:
Technology:	Si
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	220 A
Rds On - Drain-Source Resistance:	6.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	390 W
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	17 ns
Product Type:	MOSFET Modules
Rise Time:	27 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Tradename:	HiPerFET
Typical Turn-Off Delay Time:	155 ns
Typical Turn-On Delay Time:	37 ns
Unit Weight:	123 mg

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Datasheet

IXFN220N20X3 Datasheet

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

X-Class 850V - 1000V Power MOSFETs with HiPerFET™

IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).

X3-Class Power MOSFETs with HiPerFET™

IXYS X3-Class Power MOSFETs with HiPerFET™ are avalanche-rated fast intrinsic diodes with N-channel enhancement mode. These MOSFETs feature low R_DS(ON), low gate charge (Q_G), and high-power density. IXYS X3-Class 200V-300V Power MOSFETs with HiPerFET remove leftover energies during high-speed switching to avoid device failure. Typical applications include DC-to-DC converters, power supplies, robotics, servo controls, and battery chargers for light electric vehicles.

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