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IXSJ80N120R1

Name: IXYS IXSJ80N120R1
Brand: IXYS
SKU: 747-IXSJ80N120R1
Price: 26.17 EUR
Availability: InStock

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Mouser No:

747-IXSJ80N120R1

Mfr. No:

IXSJ80N120R1

Mfr.:

IXYS

Description:

SiC MOSFETs 1200V 18mohm (30A a. 25C) SiC MOSFET in isolated TO247-3L

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IXSJ80N120R1 Datasheet (PDF)

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Learn more about IXYS IXSJ80N120R1

In Stock: 483

Stock:: 483 Can Dispatch Immediately

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Factory Lead Time:: 32 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	26,17 €	26,17 €
	21,87 €	218,70 €
	19,13 €	2.295,60 €
1.020	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-3L
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	85 A
Rds On - Drain-Source Resistance:	22.5 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	154 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	266 W
Channel Mode:	Enhancement
Brand:	IXYS
Configuration:	Single
Fall Time:	13 ns
Forward Transconductance - Min:	27 S
Packaging:	Tube
Product:	Power MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	44 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	Power MOSFET
Typical Turn-Off Delay Time:	52 ns
Typical Turn-On Delay Time:	20 ns

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Datasheet

IXSJ80N120R1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

IXSJxN120R1 1,200 V SiC Power MOSFETs

Littelfuse IXSJxN120R1 1200V Silicon Carbide (SiC) Power MOSFETs are high-performance devices designed for demanding power conversion applications. The Littelfuse IXSJxN120R1 MOSFETs leverage the superior properties of SiC technology to deliver low switching losses, high efficiency, and excellent thermal performance. The IXSJ25N120R1 offers a typical R_DS(on) of 80mΩ and is optimized for lower current applications, while the IXSJ43N120R1 and IXSJ80N120R1 provide lower on-resistance values of 45mΩ and 20mΩ, respectively, supporting higher current handling capabilities. All three devices feature fast switching speeds, robust avalanche capability, and a Kelvin source pin for improved gate drive control. These characteristics make the IXSJxN120R1 series ideal for use in electric vehicle inverters, solar inverters, industrial motor drives, and high-efficiency power supplies.