BFP 640 H6327

Infineon Technologies
726-BFP640H6327
BFP 640 H6327

Mfr.:

Description:
RF Bipolar Transistors RF BIP TRANSISTOR

Datasheet:
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Learn more about Infineon Technologies BFP 640 H6327

In Stock: 2.415

Stock:
2.415 Can Dispatch Immediately
Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
0,722 € 0,72 €
0,445 € 4,45 €
0,293 € 29,30 €
0,23 € 115,00 €
0,203 € 203,00 €
Full Reel (Order in multiples of 3000)
0,172 € 516,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
BFP640H6327XTSA1
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
0,43 €
Min:
1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: RF Bipolar Transistors
RoHS:  
BFP640
Bipolar
SiGe
NPN
40 GHz
110
4 V
1.2 V
50 mA
- 65 C
+ 150 C
Single
SMD/SMT
SOT-343
AEC-Q100
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Pd - Power Dissipation: 200 mW
Product Type: RF Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Type: RF Silicon Germanium
Part # Aliases: BFP64H6327XT SP000745306 BFP640H6327XTSA1
Unit Weight: 6 mg
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Attributes selected: 0

Datasheet

Product Catalogs

TARIC:
8541290000
CNHTS:
8541210000
CAHTS:
8541290000
USHTS:
8541210095
JPHTS:
8541290100
KRHTS:
8541219000
MXHTS:
85412999
ECCN:
EAR99

RF Transistors

Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

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