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IMBG120R045M1HXTMA1

Name: Infineon IMBG120R045M1HXTMA1
Brand: Infineon Technologies
SKU: 726-IMBG120R045M1HXT
Price: 9.82 EUR
Availability: InStock

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Mouser No:

726-IMBG120R045M1HXT

Mfr. No:

IMBG120R045M1HXTMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package

Datasheet:

IMBG120R045M1HXTMA1 Datasheet (PDF)

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In Stock: 651

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	9,82 €	9,82 €
	7,46 €	74,60 €
	6,46 €	646,00 €
	5,93 €	2.965,00 €
Full Reel (Order in multiples of 1000)
	5,07 €	5.070,00 €
	5,04 €	10.080,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	47 A
Rds On - Drain-Source Resistance:	45 mOhms
Vgs - Gate-Source Voltage:	- 7 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	5.1 V
Qg - Gate Charge:	46 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	227 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	SiC MOSFETS
Series:	CoolSiC 1200V
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Part # Aliases:	IMBG120R045M1H SP005349829

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Datasheet

IMBG120R045M1HXTMA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltage classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter set, which is used to implement application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

CoolSiC™ 1200V SiC Trench MOSFETs

Infineon Technologies CoolSiC™ 1200V SiC Trench MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device's performance, robustness, and ease of use. The CoolSiC 1200V SiC Trench MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application losses and the highest reliability in operation. Suitable for high-temperature and harsh environment operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency.