MRFX1K80GNR5

NXP Semiconductors
771-MRFX1K80GNR5
MRFX1K80GNR5

Mfr.:

Description:
RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V

Datasheet:
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In Stock: 5

Stock:
5 Can Dispatch Immediately
Factory Lead Time:
10 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
286,70 € 286,70 €
247,10 € 2.471,00 €
237,22 € 5.930,50 €
Full Reel (Order in multiples of 50)
231,26 € 11.563,00 €
100 Quote

Product Attribute Attribute Value Select Attribute
NXP
Product Category: RF MOSFET Transistors
RoHS:  
N-Channel
Si
43 A
179 V
1.8 MHz to 400 MHz
24.4 dB
1.8 kW
- 40 C
+ 150 C
SMD/SMT
OM-1230G-4
Reel
Cut Tape
Brand: NXP Semiconductors
Forward Transconductance - Min: 44.7 S
Moisture Sensitive: Yes
Number of Channels: 2 Channel
Pd - Power Dissipation: 3.333 kW
Product Type: RF MOSFET Transistors
Series: MRFX1K80N
Factory Pack Quantity: 50
Subcategory: MOSFETs
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: + 10 V
Vgs th - Gate-Source Threshold Voltage: 2.9 V
Part # Aliases: 935362677578
Unit Weight: 5,281 g
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Attributes selected: 0

Datasheet

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

MRFX Series 65V LDMOS Transistors

NXP Semiconductors MRFX Series 65V LDMOS Transistors offer high RF output power, superior ruggedness, and thermal performance. These transistors feature high power density, lower current losses, high efficiency, easier matching to 50Ω, wide safety margin, and negligible magnetic radiation. The higher power density, low current, and high safety margin enable highly reliable and more integrated industry 4.0 systems with better energy management.

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