STGD5H60DF

STMicroelectronics
511-STGD5H60DF
STGD5H60DF

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT, H series 600 V, 5 A high speed

ECAD Model:
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In Stock: 2.897

Stock:
2.897 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
0,998 € 1,00 €
0,626 € 6,26 €
0,412 € 41,20 €
0,353 € 176,50 €
Full Reel (Order in multiples of 2500)
0,299 € 747,50 €
0,238 € 1.190,00 €
0,229 € 2.290,00 €
0,224 € 5.600,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
DPAK-3 (TO-252-3)
SMD/SMT
Single
600 V
1.5 V
- 20 V, 20 V
10 A
83 W
- 55 C
+ 175 C
STGD5H60DF
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 10 A
Gate-Emitter Leakage Current: +/- 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 2500
Subcategory: IGBTs
Unit Weight: 330 mg
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (VCE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.