TK110Z65Z,S1F

Toshiba
757-TK110Z65ZS1F
TK110Z65Z,S1F

Mfr.:

Description:
MOSFETs POWER MOSFET TRANSISTOR TO-247-4L PD=190W F=1MHZ

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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
40
Factory Lead Time:
21
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
5,81 € 5,81 €
3,42 € 34,20 €
2,85 € 285,00 €
2,55 € 1.275,00 €

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-247-4
N-Channel
1 Channel
650 V
24 A
110 mOhms
- 10 V, 10 V
3 V
40 nC
- 55 C
+ 150 C
190 W
Enhancement
Tube
Brand: Toshiba
Configuration: Single
Fall Time: 4 ns
Product Type: MOSFETs
Rise Time: 18 ns
Factory Pack Quantity: 25
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 90 ns
Typical Turn-On Delay Time: 45 ns
Unit Weight: 6 g
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.

TK110Z65Z Silicon N-Channel DTMOSIV Series MOSFET

Toshiba TK110Z65Z Silicon N-Channel DTMOSIV Series MOSFET features a low 0.092Ω (typical) drain-source on-resistance, high-speed switching properties, and low capacitance. The TK110Z65Z also features an enhancement mode making it ideal for use in switching power supply applications.