+420 517070880

Part of the TTI Family of Specialists Contact Mouser (Czech Republic) +420 517070880 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

TK12A60D(STA4,Q,M)

Name: Toshiba TK12A60D(STA4,Q,M)
Brand: Toshiba
SKU: 757-TK12A60DSTA4QM
Price: 3.07 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

757-TK12A60DSTA4QM

Mfr. No:

TK12A60D(STA4,Q,M)

Mfr.:

Toshiba

Description:

MOSFETs N-Ch MOS 12A 600V 45W 1800pF 0.55

Datasheet:

TK12A60D(STA4,Q,M) Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Toshiba TK12A60D(STA4,Q,M)

In Stock: 72

Stock:: 72 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 32 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,07 €	3,07 €
	1,57 €	15,70 €
	1,32 €	132,00 €
	1,14 €	570,00 €
	1,09 €	1.090,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	550 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	38 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	45 W
Channel Mode:	Enhancement
Tradename:	MOSVII
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Product Type:	MOSFETs
Series:	TK12A60D
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	2 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

TK12A60D(STA4,Q,M) Datasheet (PDF)

TARIC:: 8542399000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
MXHTS:: 8542399901
ECCN:: EAR99

π-MOS VII MOSFETs

Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and R_DS(ON) ratings. These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range from 2A to 20A. Vishay π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through-hole packages and compact DPAK-3 and PW-Mold-3 surface mount packages.