AFGB30T65RQDN

onsemi
863-AFGB30T65RQDN
AFGB30T65RQDN

Mfr.:

Description:
IGBTs IGBT - 650V 30A -Short circuit rated FS4 - Automotive

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
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Learn more about onsemi AFGB30T65RQDN

In Stock: 560

Stock:
560 Can Dispatch Immediately
Factory Lead Time:
17 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,69 € 3,69 €
2,43 € 24,30 €
1,81 € 181,00 €
1,62 € 810,00 €
Full Reel (Order in multiples of 800)
1,43 € 1.144,00 €

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: IGBTs
RoHS:  
Si
D2PAK-3
SMD/SMT
Single
650 V
1.58 V
20 V, 30 V
68 A
235.48 W
- 55 C
+ 175 C
AFGB30T65RQDN
Reel
Cut Tape
Brand: onsemi
Product Type: IGBTs
Factory Pack Quantity: 800
Subcategory: Transistors
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Attributes selected: 0

Datasheet

PCN

TARIC:
8541290000
USHTS:
8541290095
ECCN:
EAR99

AFGB30T65RQDN IGBT

onsemi AFGB30T65RQDN Insulated Gate Bipolar Transistor (IGBT) offers the optimum performance for automotive applications. This IGBT features high current capability, fast switching, high input impedance, and tightened parameter distribution. The AFGB30T65RQDN IGBT is short circuit rated and offers a high figure of merit with low conduction and switching losses. This IGBT is AEC-Q101 qualified, Pb-free, and RoHS compliant. Typical applications include the E-compressor for HEV/EV and the PTC Heater for HEV/EV.

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