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FFSH40120ADN-F155

Name: onsemi FFSH40120ADN-F155
Brand: onsemi
SKU: 512-FFSH40120ADNF155
Price: 14.02 EUR
Availability: InStock

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Mouser No:

512-FFSH40120ADNF155

Mfr. No:

FFSH40120ADN-F155

Mfr.:

onsemi

Description:

SiC Schottky Diodes 1200V SiC SBD 40A

Datasheet:

FFSH40120ADN-F155 Datasheet

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In Stock: 125

Stock:: 125 Can Dispatch Immediately

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Factory Lead Time:: 11 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	14,02 €	14,02 €
	10,71 €	107,10 €
	10,01 €	1.001,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC Schottky Diodes
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Configuration:	Dual Anode Common Cathode
If - Forward Current:	40 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.45 V
Ifsm - Forward Surge Current:	135 A
Ir - Reverse Current:	200 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FFSH40120ADN
Packaging:	Tube
Brand:	onsemi
Pd - Power Dissipation:	220 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	450
Subcategory:	Diodes & Rectifiers
Tradename:	EliteSiC
Vr - Reverse Voltage:	1.2 kV
Part # Aliases:	FFSH40120ADN_F155
Unit Weight:	6,390 g

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Datasheet

FFSH40120ADN-F155 Datasheet

PCN

TARIC:: 8541100000
CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
MXHTS:: 8541100101
ECCN:: EAR99

FFSH SiC Schottky Diodes

onsemi FFSH Silicon Carbide (SiC) Schottky Diodes provide improved system efficiency and have a max junction temperature of +175°C. These onsemi Schottky Diodes have no switching loss and a high surge current capacity. FFSH diodes use Silicon Carbide semiconductor material for higher operating frequency, increasing power density and reduction of system size/cost. This ensures high reliability and robust operation during surge or over-voltage conditions.

1200V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 1200V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

Silicon Carbide Schottky Diodes

onsemi Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost. onsemi offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.

D1 EliteSiC Diodes

onsemi D1 EliteSiC Diodes is a high-performance and versatile solution designed for modern power electronics applications. The onsemi D1 features voltage ratings of 650V, 1200V, and 1700V. These diodes offer the flexibility to meet various design requirements. Featuring different packages, such as D2PAK2, D2PAK3, TO-220-2, TO-247-2, and TO-247-3, the D1 EliteSiC Diodes provide designers with options to optimize board space and thermal performance.

Energy Storage Solutions

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