GP2T040A120H

SemiQ
148-GP2T040A120H
GP2T040A120H

Mfr.:

Description:
SiC MOSFETs SiC MOSFET 1200V 40mohm TO-247-4L

ECAD Model:
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In Stock: 13

Stock:
13 Can Dispatch Immediately
Factory Lead Time:
2 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
9,99 € 9,99 €
8,26 € 82,60 €
5,06 € 607,20 €
5,01 € 2.555,10 €

Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: SiC MOSFETs
RoHS:  
REACH - SVHC:
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
63 A
37 mOhms
- 10 V, + 25 V
4 V
118 nC
- 55 C
+ 175 C
322 W
Enhancement
Brand: SemiQ
Configuration: Single
Fall Time: 14 ns
Forward Transconductance - Min: 16 S
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 5 ns
Series: GP2T040A120
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 23 ns
Typical Turn-On Delay Time: 14 ns
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

GP2T040A120x SiC MOSFETs

SemiQ GP2T040A120x SiC MOSFETs benefit many applications, including Power Factor Correction, DC-DC Converter Primary Switching, and Synchronous rectification. The GP2T040A120x when combined with Silicon Carbide Schottky diodes offers optimal performance that can be achieved without the trade-offs made with Silicon devices. EV Charging, Solar/Wind, Industrial Controls, and HVAC systems benefit from the increased performance achieved with SemiQ SiC MOSFETs.