IDW40G65C5XKSA1

Infineon Technologies
726-IDW40G65C5XKSA1
IDW40G65C5XKSA1

Mfr.:

Description:
SiC Schottky Diodes SIC DIODES

Datasheet:
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Learn more about Infineon Technologies IDW40G65C5XKSA1

In Stock: 540

Stock:
540 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
10,48 € 10,48 €
8,53 € 85,30 €
7,11 € 711,00 €
6,34 € 3.043,20 €
5,38 € 6.456,00 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-247-3
Single
40 A
650 V
1.5 V
182 A
2.2 uA
- 55 C
+ 175 C
XDW40G65
Tube
Brand: Infineon Technologies
Pd - Power Dissipation: 183 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 240
Subcategory: Diodes & Rectifiers
Tradename: CoolSiC
Vr - Reverse Voltage: 650 V
Part # Aliases: IDW40G65C5 SP001632890
Unit Weight: 6 g
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TARIC:
8541100000
CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
ECCN:
EAR99

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

Generation 5 CoolSiC™ 650V Schottky Diodes

Infineon Generation 5 CoolSiC™ 650V Schottky Diodes deliver market-leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as the latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Qc x Vf).

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