+420 517070880

Part of the TTI Family of Specialists Contact Mouser (Czech Republic) +420 517070880 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IGI65D1414A3MSXUMA1

Name: Infineon IGI65D1414A3MSXUMA1
Brand: Infineon Technologies
SKU: 726-IGI65D1414A3MSXU
Price: 6.1 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-IGI65D1414A3MSXU

Mfr. No:

IGI65D1414A3MSXUMA1

Mfr.:

Infineon Technologies

Description:

GaN FETs Two 140 mohm / 650 V GaN transistors in half-bridge configuration

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IGI65D1414A3MSXUMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 2.392

Stock:: 2.392 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	6,10 €	6,10 €
	4,12 €	41,20 €
	3,07 €	307,00 €
	2,78 €	2.780,00 €
Full Reel (Order in multiples of 3000)
	2,61 €	7.830,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	QFN-32
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Rds On - Drain-Source Resistance:	170 mOhms
Vgs th - Gate-Source Threshold Voltage:	1.6 V
Qg - Gate Charge:	1.8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Brand:	Infineon Technologies
Configuration:	Dual
Packaging:	Reel
Packaging:	Cut Tape
Product:	Transistors
Product Type:	GaN FETs
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	2 N-Channel
Part # Aliases:	IGI65D1414A3MS SP005970004

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IGI65D1414A3MSXUMA1 Datasheet (PDF)

USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

CoolGaN™ 650V G5 Transistors

Infineon Technologies CoolGaN™ 650V G5 Transistors feature highly efficient gallium nitride (GaN) transistor technology for power conversion. The 650V G5 family addresses consumer, data center, industrial, and solar application challenges. The transistors offer improved system efficiency and power density with ultra-fast switching capability. The CoolGaN technology provides discrete and integrated solutions designed to enhance overall system performance. The Infineon Technologies CoolGaN 650V G5 Transistors enable high operating frequencies and reduce EMI ratings. The transistors are ideal for power distribution, switch-mode power supplies (SMPS), telecommunications, and other industrial applications.