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IPT030N12N3GATMA1

Name: Infineon IPT030N12N3GATMA1
Brand: Infineon Technologies
SKU: 726-IPT030N12N3GATM1
Price: 5.18 EUR
Availability: InStock

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Mouser No:

726-IPT030N12N3GATM1

Mfr. No:

IPT030N12N3GATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET >100-150V

Datasheet:

IPT030N12N3GATMA1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies IPT030N12N3GATMA1

In Stock: 2.034

Stock:: 2.034 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	5,18 €	5,18 €
	3,70 €	37,00 €
	2,68 €	268,00 €
	2,54 €	2.540,00 €
Full Reel (Order in multiples of 2000)
	2,50 €	5.000,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	120 V
Id - Continuous Drain Current:	237 A
Rds On - Drain-Source Resistance:	3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	158 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Product Type:	MOSFETs
Factory Pack Quantity:	2000
Subcategory:	Transistors
Part # Aliases:	IPT030N12N3 G SP005348026

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Datasheet

IPT030N12N3GATMA1 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

OptiMOS™ 3 N-channel MOSFETs

Infineon Technologies OptiMOS™ 3 N-channel MOSFETs feature low on-state resistance in a SuperSO8 leadless package. OptiMOS 3 MOSFETs increase power density up to 50 percent in industrial, consumer and telecommunications applications. OptiMOS™ 3 is available in 40V, 60V and 80V N-channel MOSFETs in SuperSO8 and Shrink SuperSO8 (S3O8) packages. Compared to standard Transistor Outline (TO) packages, the SuperSO8 increase power density by as much as 50 percent.