It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IQEH80NE2LM7UCGSCATMA1

Name: Infineon IQEH80NE2LM7UCGSCATMA1
Brand: Infineon Technologies
SKU: 726-IQEH80NE2LM7UCGS
Price: 2.3 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-IQEH80NE2LM7UCGS

Mfr. No:

IQEH80NE2LM7UCGSCATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 7 Power -Transistor, 25 V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IQEH80NE2LM7UCGSCATMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IQEH80NE2LM7UCGSCATMA1

In Stock: 4.792

Stock:: 4.792 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,30 €	2,30 €
	1,47 €	14,70 €
	0,998 €	99,80 €
	0,835 €	417,50 €
	0,734 €	734,00 €
	0,68 €	1.700,00 €
Full Reel (Order in multiples of 6000)
	0,658 €	3.948,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	282 A
Rds On - Drain-Source Resistance:	800 uOhms
Vgs - Gate-Source Voltage:	16 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	17.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	107 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	2.7 ns
Forward Transconductance - Min:	50 S
Product Type:	MOSFETs
Rise Time:	1.4 ns
Series:	OptiMOS 7
Factory Pack Quantity:	6000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	20.1 ns
Typical Turn-On Delay Time:	5.4 ns
Part # Aliases:	IQEH80NE2LM7UCGSC SP006008718

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IQEH80NE2LM7UCGSCATMA1 Datasheet (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel OptiMOS™ 7 Power MOSFETs

Infineon Technologies N-Channel OptiMOS™ 7 Power MOSFETs are high-performance N-channel transistors designed for demanding power conversion applications. These MOSFETs offer very low on-resistance, superior thermal resistance, and excellent Miller ratio for dv/dt ruggedness. The OptiMOS™ 7 power MOSFETs are optimized for both hard-switching and soft-switching topologies, and FOM_oss. These MOSFETs are 100% avalanche tested and are RoHS compliant. The OptiMOS™ 7 power MOSFETs are halogen-free according to IEC61249‑2‑21.

N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.