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ISC104N12LM6ATMA1

Name: Infineon ISC104N12LM6ATMA1
Brand: Infineon Technologies
SKU: 726-ISC104N12LM6ATMA
Price: 2.26 EUR
Availability: InStock

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Mouser No:

726-ISC104N12LM6ATMA

Mfr. No:

ISC104N12LM6ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET >100-150V

Datasheet:

ISC104N12LM6ATMA1 Datasheet (PDF)

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In Stock: 11.859

Stock:: 11.859 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,26 €	2,26 €
	1,46 €	14,60 €
	1,01 €	101,00 €
	0,807 €	403,50 €
	0,772 €	772,00 €
	0,753 €	1.882,50 €
Full Reel (Order in multiples of 5000)
	0,753 €	3.765,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	120 V
Id - Continuous Drain Current:	63 A
Rds On - Drain-Source Resistance:	10.4 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	10.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	94 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	4 ns
Forward Transconductance - Min:	30 S
Product Type:	MOSFETs
Rise Time:	2.5 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	14 ns
Typical Turn-On Delay Time:	6 ns
Part # Aliases:	ISC104N12LM6 SP005586043

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Datasheet

ISC104N12LM6ATMA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 6 Power MOSFETs

Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilises thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced R_DS(ON) of 30% and are optimised for synchronous rectification.

OptiMOS™ 3 N-channel MOSFETs

Infineon Technologies OptiMOS™ 3 N-channel MOSFETs feature low on-state resistance in a SuperSO8 leadless package. OptiMOS 3 MOSFETs increase power density up to 50 percent in industrial, consumer and telecommunications applications. OptiMOS™ 3 is available in 40V, 60V and 80V N-channel MOSFETs in SuperSO8 and Shrink SuperSO8 (S3O8) packages. Compared to standard Transistor Outline (TO) packages, the SuperSO8 increase power density by as much as 50 percent.