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MASTERGAN4

Name: STMicroelectronics MASTERGAN4
Brand: STMicroelectronics
SKU: 511-MASTERGAN4
Price: 5.69 EUR
Availability: InStock

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Mouser No:

511-MASTERGAN4

Mfr. No:

MASTERGAN4

Mfr.:

STMicroelectronics

Description:

Gate Drivers High power density 600V half-bridge driver with two enhancement mode GaN HEMTs

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Datasheet:

MASTERGAN4 Datasheet (PDF)

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Learn more about STMicroelectronics MASTERGAN4

In Stock: 112

Stock:: 112 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,69 €	5,69 €
	4,36 €	43,60 €
	4,03 €	100,75 €
	3,66 €	366,00 €
	3,49 €	872,50 €
	3,39 €	1.695,00 €
	3,35 €	3.350,00 €
	3,30 €	8.250,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Gate Drivers
RoHS:
Product:	Half-Bridge Drivers
Type:	Half-Bridge
Mounting Style:	SMD/SMT
Package/Case:	QFN-31
Number of Drivers:	2 Driver
Number of Outputs:	3 Output
Output Current:	6.5 A
Supply Voltage - Min:	3.3 V
Supply Voltage - Max:	15 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	MASTERGAN
Packaging:	Tray
Brand:	STMicroelectronics
Features:	600 V System-in-Package Integrating Half-Bridge Gate Driver
Input Voltage - Max:	15 V
Input Voltage - Min:	3.3 V
Moisture Sensitive:	Yes
Product Type:	Gate Drivers
Rds On - Drain-Source Resistance:	225 mOhms
Factory Pack Quantity:	1560
Subcategory:	PMIC - Power Management ICs
Unit Weight:	150 mg

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Datasheet

MASTERGAN4 Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MASTERGAN GaN Half-Bridge High Voltage Drivers

STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high-power-density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an R_DS(ON) of 150mΩ and a 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.