It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

MSCSM120AM31CTBL1NG

Name: Microchip MSCSM120AM31CTBL1NG
Brand: Microchip Technology
SKU: 579-SM120AM31CTBL1NG
Price: 106.2 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

579-SM120AM31CTBL1NG

Mfr. No:

MSCSM120AM31CTBL1NG

Mfr.:

Microchip Technology

Description:

Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL1

Datasheet:

MSCSM120AM31CTBL1NG Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Microchip Technology MSCSM120AM31CTBL1NG

In Stock: 6

Stock:: 6 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 6 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	106,20 €	106,20 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	Discrete Semiconductor Modules
RoHS:
Product:	MOSFET-SiC SBD Modules
Type:	MOSFET / SiC SBD
Technology:	SiC
Vf - Forward Voltage:	1.5 V
Vr - Reverse Voltage:	1.2 kV
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Mounting Style:	Screw Mount
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Brand:	Microchip Technology
Configuration:	Phase Leg
Fall Time:	25 ns
Id - Continuous Drain Current:	79 A
Pd - Power Dissipation:	310 W
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	31 mOhms
Rise Time:	30 ns
Factory Pack Quantity:	1
Subcategory:	Discrete Semiconductor Modules
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	30 ns
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs th - Gate-Source Threshold Voltage:	1.8 V

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

MSCSM120AM31CTBL1NG Datasheet (PDF)

PCN

Product Change Notification (PDF)

This functionality requires JavaScript to be enabled.

USHTS:: 8541290065
ECCN:: EAR99

MSCSM120x MOSFET Power Modules

Microchip Technology MSCSM120x MOSFET Power Modules are high-efficiency converters that feature Si₃N₄ substrate with thick copper for improved thermal performance. These modules offer a low profile, direct mounting to the heatsink (isolated package), an internal thermistor for temperature monitoring, and an extended temperature range. The MSCSM120x modules operate at 1.2kV reverse voltage (V_R), -10V to 25V gate-source voltage range (V_GS), 310W/560W power dissipation (P_D), and 79A/150A continuous drain current (I_D). These modules are used in applications such as high-reliability power systems, high-efficiency AC/DC and DC/AC converters, motor control, and AC switches.