SI8802DB-T2-E1

Vishay / Siliconix
781-SI8802DB-T2-E1
SI8802DB-T2-E1

Mfr.:

Description:
MOSFETs 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about Vishay / Siliconix SI8802DB-T2-E1

In Stock: 5.917

Stock:
5.917 Can Dispatch Immediately
Factory Lead Time:
2 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
0,998 € 1,00 €
0,688 € 6,88 €
0,436 € 43,60 €
0,27 € 135,00 €
0,20 € 200,00 €
Full Reel (Order in multiples of 3000)
0,142 € 426,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
MicroFoot-4
N-Channel
1 Channel
8 V
3.5 A
54 mOhms
- 5 V, 5 V
350 mV
4.3 nC
- 55 C
+ 150 C
900 mW
Enhancement
TrenchFET
Reel
Cut Tape
MouseReel
Brand: Vishay / Siliconix
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Fall Time: 7 ns
Forward Transconductance - Min: 13 S
Product Type: MOSFETs
Rise Time: 15 ns
Series: SI8
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 22 ns
Typical Turn-On Delay Time: 5 ns
Unit Weight: 45,104 mg
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
8541210101
KRHTS:
8541219000
MXHTS:
85412101
ECCN:
EAR99

Si88xx 8V TrenchFET® Power MOSFETs

Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs feature the industry's first n- and p-channel power MOSFET in the industry's smallest 0.8 mm by 0.8 mm chip-scale package, in addition to the first n- and p-channel devices to offer on-resistance (RDS(on)) ratings down to 1.2 V in this package size. The Si88xx 8V TrenchFET® Power MOSFETs come in the MICRO FOOT® package that occupies up to 36 % less board space than the next smallest chip-scale devices, yet offer comparable − and even lower − on-resistance (RDS(on)).

MicroFoot® Power MOSFETs

Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The Vishay Siliconix MicroFoot Power MOSFETs low on-resistance also means a lower voltage drop across the load switch to prevent an unwanted under-voltage lockout.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.