SQJ131ELP-T1_GE3 MOSFETs

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Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Vishay / Siliconix MOSFETs P-CHANNEL 30-V (D-S) 175C MOSFET
Datasheet
908In Stock
Min.: 1
Mult.: 1

Si SMD/SMT SO-8L-4 P-Channel 1 Channel 30 V 300 A 3 mOhms - 20 V, 20 V 2.5 V 207 nC - 55 C + 175 C 500 W Enhancement TrenchFET
Vishay MOSFETs
Datasheet
N/A
Si