Results: 53
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Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 60 mohm G2
Datasheet
40In Stock
720On Order
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 32.8 A 73 mOhms - 10 V, + 25 V 5.6 V 19 nC - 55 C + 175 C 130 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 10 mohm G2
Datasheet
10In Stock
720On Order
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 144 A 13.1 mOhms - 10 V, + 25 V 5.6 V 112 nC - 55 C + 175 C 440 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
1.127In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 115 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 416 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
1.295In Stock
1.800Expected 12/10/2026
MouseReel Available
Min.: 1
Mult.: 1
: 1.800

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 15 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
1.746In Stock
Min.: 1
Mult.: 1
: 1.800

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 20 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
1.267In Stock
Min.: 1
Mult.: 1
: 1.800

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 40 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
1.771In Stock
Min.: 1
Mult.: 1
: 1.800

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 50 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
1.763In Stock
Min.: 1
Mult.: 1
: 1.800

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 60 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
590In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 93 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 341 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
303In Stock
Min.: 1
Mult.: 1
: 2.000

SMD/SMT TO-263-7 N-Channel 1 Channel 50 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
146In Stock
Min.: 1
Mult.: 1
: 2.000

SMD/SMT TO-263-7 N-Channel 1 Channel 60 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
234In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 49 mOhms - 7 V, + 23 V 5.6 V 28 nC - 55 C + 175 C 172 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
189In Stock
720Expected 6/11/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 38 A 62 mOhms - 7 V, + 23 V 5.6 V 22 nC - 55 C + 175 C 153 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
7In Stock
960On Order
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 210 A 8.5 mOhms - 18 V, + 18 V 5.6 V 439 nC - 55 C + 175 C 625 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
251In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 38 A 62 mOhms - 7 V, + 23 V 5.6 V 22 nC - 55 C + 175 C 153 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
5In Stock
2.000Expected 10/29/2026
Min.: 1
Mult.: 1
: 2.000

SMD/SMT TO-263-7 N-Channel 1 Channel 40 mOhms Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
25In Stock
480On Order
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 26.6 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC - 55 C + 175 C 111 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 26 mohm G2
Datasheet
11In Stock
720On Order
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 64 A 33 mOhms - 10 V, + 25 V 5.6 V 42 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 650 V, 60 mohm G2
Datasheet
33In Stock
240On Order
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 32.8 A 73 mOhms - 10 V, + 25 V 5.6 V 19 nC - 55 C + 175 C 130 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
1.450Expected 7/23/2026
Min.: 1
Mult.: 1
: 750

SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 196 A 8.5 mOhms - 7 V, + 23 V 5.6 V 179 nC - 55 C + 175 C 937 W Enhancement
Infineon Technologies SiC MOSFETs Leverages switching performance while enabling the benefits of top-side cooling
Datasheet
4.396On Order
Min.: 1
Mult.: 1
: 1.800

SMD/SMT N-Channel 1 Channel 650 V 82 A 33 mOhms - 10 V, + 25 V 5.6 V 42 nC - 55 C + 175 C 365 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
4.000Expected 12/10/2026
MouseReel Available
Min.: 1
Mult.: 1
: 2.000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 131 A 18 mOhms - 7 V to 23 V 4.5 V 148 nC - 55 C + 175 C 535 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
2.000Expected 6/1/2026
Min.: 1
Mult.: 1
: 2.000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 24 mOhms - 7 V, + 23 V 5.6 V 57 nC - 55 C + 175 C 440 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
3.972Expected 1/28/2027
Min.: 1
Mult.: 1
: 2.000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 58.7 A 49 mOhms - 7 V, + 23 V 5.6 V 28 nC - 55 C + 175 C 277 W Enhancement
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
15.600On Order
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 46 A 49 mOhms - 7 V, + 23 V 5.6 V 28 nC - 55 C + 175 C 172 W Enhancement CoolSiC