UCC21756QDWRQ1

Name: Texas Instruments UCC21756QDWRQ1
Brand: Texas Instruments
SKU: 595-UCC21756QDWRQ1
Price: 6.6 EUR
Availability: InStock

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Mouser No:

595-UCC21756QDWRQ1

Mfr. No:

UCC21756QDWRQ1

Mfr.:

Texas Instruments

Description:

Galvanically Isolated Gate Drivers Automotive ± 10-A  isolated

Datasheet:

UCC21756QDWRQ1 Datasheet

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In Stock: 1.830

Stock:: 1.830 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	6,60 €	6,60 €
	5,10 €	51,00 €
	4,73 €	118,25 €
	4,32 €	432,00 €
	4,12 €	1.030,00 €
	4,01 €	2.005,00 €
	3,90 €	3.900,00 €
Full Reel (Order in multiples of 2000)
	3,82 €	7.640,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Galvanically Isolated Gate Drivers
RoHS:
Series:	UCC21756
Mounting Style:	SMD/SMT
Package/Case:	SOIC-16
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Moisture Sensitive:	Yes
Product Type:	Galvanically Isolated Gate Drivers
Factory Pack Quantity:	2000
Supply Voltage - Max:	5.5 V
Supply Voltage - Min:	3 V
Technology:	SiC
Type:	Single Channel Gate Driver

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Datasheet

UCC21756QDWRQ1 Datasheet

PCN

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CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

UCC21756-Q1 Isolated Single-Channel Gate Driver

Texas Instruments UCC21756-Q1 Isolated Single-Channel Gate Driver is designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. UCC21756-Q1 has up to ±10A peak source and sink current. The input side is isolated from the output side with SiO₂ capacitive isolation technology, supporting up to 1.5kV_RMS working voltage, 12.8kV_PK surge immunity with longer than 40-years isolation barrier life, and providing low part-to-part skew, and > 150V/ns common mode noise immunity (CMTI).