DMT26M0LDG Asymmetrical Dual N-Channel MOSFETs
Diodes Inc. DMT26M0LDG Asymmetrical Dual N-Channel MOSFETs are designed to minimize the on-state resistance [RDS(ON)] yet maintain superior switching performance. These MOSFETs have a drain-source breakdown voltage (BVDSS) of 25V. The static drain-source on-resistance [RDS(ON)] for Q1 is 6mΩ at VGS = 10V, 7.5mΩ at VGS = 4.5V or Q2 is 2.0mΩ at VGS = 10V, 3.1mΩ at VGS = 4.5V. The continuous drain current (ID) rating for Q1 is 11.6A at VGS = 10V, 10.4A at VGS = 4.5V, or Q2 is 20.1A at VGS = 10V, 16.1A at VGS = 4.5V. These ratings make these Diodes Inc. DMT26M0LDG devices ideal for high-efficiency power-management applications.
