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SIS890ADN-T1-GE3

Name: Vishay SIS890ADN-T1-GE3
Brand: Vishay / Siliconix
SKU: 78-SIS890ADN-T1-GE3
Price: 1.14 EUR
Availability: InStock

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Mouser No:

78-SIS890ADN-T1-GE3

Mfr. No:

SIS890ADN-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs PWRPK 100V 24.7A N-CH MOSFET

Datasheet:

SIS890ADN-T1-GE3 Datasheet

ECAD Model:

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In Stock: 58.867

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,14 €	1,14 €
	0,718 €	7,18 €
	0,474 €	47,40 €
	0,376 €	188,00 €
	0,342 €	342,00 €
Full Reel (Order in multiples of 3000)
	0,302 €	906,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-1212-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	24.7 A
Rds On - Drain-Source Resistance:	25.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	19.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	39 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Fall Time:	4 ns
Forward Transconductance - Min:	45 S
Product Type:	MOSFETs
Rise Time:	6 ns
Series:	SIS
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	TrenchFET Power MOSFET
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	9 ns
Unit Weight:	1 g

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Datasheet

SIS890ADN-T1-GE3 Datasheet

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

TrenchFET® Gen IV MOSFETs

Vishay / Siliconix TrenchFET^® Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK^® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low R_DS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK^® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high-power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switches.

SiS890ADN N-Channel 100V MOSFET

Vishay / Siliconix SiS890ADN N-Channel 100V MOSFET offers 100VDC drain-source voltage, 40A pulsed drain current, and a single configuration. It features low R_DS x Q_g figure-of-merit (FOM) along with TrenchFET® GEn IV power. This MOSFET is 100% R_g and UIS tested. Vishay SiS890ADN N-Channel 100V MOSFET is ideally suited for synchronous rectification, primary side switches, DC/DC converters, and circuit protection.