CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltage classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter set, which is used to implement application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

Results: 30
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Datasheet
651In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 47 A 45 mOhms - 7 V, + 20 V 5.1 V 46 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Datasheet
1.148In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 26 A 125 mOhms - 7 V, + 20 V 5.1 V 23 nC - 55 C + 175 C 136 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Datasheet
345In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 36 A 83 mOhms - 7 V, + 20 V 5.1 V 34 nC - 55 C + 175 C 181 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
444In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
Datasheet
1.121In Stock
4.000Expected 5/21/2026
MouseReel Available
Min.: 1
Mult.: 1
Reel: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.7 kV 5.2 A 1 Ohms - 10 V, + 20 V 4.5 V 5 nC - 55 C + 175 C 68 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
Datasheet
1.882In Stock
1.250Expected 3/19/2026
MouseReel Available
Min.: 1
Mult.: 1
Reel: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.7 kV 9.8 A 450 mOhms - 10 V, + 20 V 4.5 V 11 nC - 55 C + 175 C 107 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Datasheet
179In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 56 A 41 mOhms - 7 V, + 20 V 5.1 V 63 nC - 55 C + 175 C 300 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Datasheet
594In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 18 A 189 mOhms - 7 V, + 20 V 5.1 V 13.4 nC - 55 C + 175 C 107 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Datasheet
850In Stock
1.000Expected 2/26/2026
MouseReel Available
Min.: 1
Mult.: 1
Reel: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 4.7 A 468 mOhms - 7 V, + 20 V 5.1 V 5.9 nC - 55 C + 175 C 65 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Datasheet
176In Stock
240Expected 2/26/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 56 A 40 mOhms - 7 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 227 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Datasheet
1.180In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 26 A 117 mOhms - 7 V, + 23 V 5.7 V 21 nC - 55 C + 150 C 115 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Datasheet
1.004In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 13 A 289 mOhms - 7 V, + 23 V 5.7 V 8.5 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
Datasheet
872In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 56 A 40 mOhms - 7 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 227 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
222In Stock
720Expected 7/30/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 59 A 34 mOhms - 5 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
332In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
153In Stock
240Expected 2/23/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 34 mOhms - 5 V, + 23 V 5.7 V 62 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Datasheet
57In Stock
1.000Expected 2/16/2026
MouseReel Available
Min.: 1
Mult.: 1
Reel: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 13 A 294 mOhms - 7 V, + 20 V 5.1 V 9.4 nC - 55 C + 175 C 83 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Datasheet
255In Stock
240Expected 8/13/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 36 A 78 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 150 C 150 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Datasheet
422In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 3.5 V 13 nC - 55 C + 175 C 94 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Datasheet
68In Stock
240Expected 2/16/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 4.7 A 455 mOhms - 7 V, + 23 V 5.7 V 5.3 nC - 55 C + 150 C 60 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
300In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 26 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 150 C 96 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
251In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
Datasheet
78In Stock
960Expected 5/7/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 36 A 78 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 150 C 150 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
Datasheet
159In Stock
240Expected 2/12/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 5.7 V 13 nC - 55 C + 150 C 94 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
Datasheet
80In Stock
480Expected 8/5/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 13 A 220 mOhms - 7 V, + 23 V 5.7 V 8.5 nC - 55 C + 150 C 75 W Enhancement CoolSiC