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NVHL070N120M3S

Name: onsemi NVHL070N120M3S
Brand: onsemi
SKU: 863-NVHL070N120M3S
Price: 13.78 EUR
Availability: InStock

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Mouser No:

863-NVHL070N120M3S

Mfr. No:

NVHL070N120M3S

Mfr.:

onsemi

Description:

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 65 mohm, 1200 V, M3S, TO-247-3L

Datasheet:

NVHL070N120M3S Datasheet

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In Stock: 439

Stock:: 439 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	13,78 €	13,78 €
	9,74 €	97,40 €
	8,36 €	1.003,20 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	34 A
Rds On - Drain-Source Resistance:	87 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.4 V
Qg - Gate Charge:	57 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	160 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	9.6 ns
Forward Transconductance - Min:	12 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	24 ns
Series:	NVHL070N120M3S
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	29 ns
Typical Turn-On Delay Time:	10 ns

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Datasheet

NVHL070N120M3S Datasheet

PCN

Product Change Notification 2025-9-26 (PDF)

TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

NVHL070N120M3S EliteSiC Automotive SiC MOSFET

onsemi NVHL070N120M3S EliteSiC Automotive Silicone Carbide (SiC) MOSFET is a 1200V M3S planar device optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn-off spikes on the gate. This device delivers optimum performance when driven with an 18V gate drive but also works well with a 15V gate drive.

M3S EliteSiC MOSFETs

onsemi M3S EliteSiC MOSFETs are solutions for high-frequency switching applications that employ hard-switched topologies. The onsemi M3S MOSFETs are designed to optimize performance and efficiency. The device has a remarkable ~40% reduction in total switching losses (Etot) compared to the 1200V 20mΩ M1 counterparts. The M3S EliteSiC MOSFETs are perfectly suited for various applications, including solar power systems, onboard chargers, and electric vehicle (EV) charging stations.