STP65N150M9

STMicroelectronics
511-STP65N150M9
STP65N150M9

Mfr.:

Description:
MOSFETs N-channel 650 V, 128 mOhm typ., 20 A MDmesh M9 Power MOSFET
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In Stock: 86

Stock:
86 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,81 € 3,81 €
2,37 € 23,70 €
1,82 € 182,00 €
1,59 € 795,00 €
1,50 € 1.500,00 €
1,43 € 2.860,00 €
1,38 € 6.900,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
650 V
20 A
150 mOhms
- 30 V, 30 V
3.2 V
32 nC
- 55 C
+ 150 C
140 W
Enhancement
Tube
Brand: STMicroelectronics
Configuration: Single
Fall Time: 10 ns
Product Type: MOSFETs
Rise Time: 5 ns
Series: MDmesh M9
Factory Pack Quantity: 1000
Subcategory: Transistors
Typical Turn-Off Delay Time: 40 ns
Typical Turn-On Delay Time: 12 ns
Unit Weight: 2 g
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Compliance Codes
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.

STP65N150M9 Power MOSFET

STMicroelectronics STP65N150M9 Power MOSFET is based on super-junction MDmesh M9 technology. The device is suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon-based M9 technology benefits from a multi-drain manufacturing process, allowing an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values among all silicon-based fast-switching super-junction Power MOSFETs. This makes it ideal for applications that require superior power density and outstanding efficiency.

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