FDT4N50NZU

onsemi
863-FDT4N50NZU
FDT4N50NZU

Mfr.:

Description:
MOSFETs UNIFET II 3OHM SOT223

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about onsemi FDT4N50NZU

In Stock: 4.984

Stock:
4.984 Can Dispatch Immediately
Factory Lead Time:
11 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,63 € 1,63 €
1,02 € 10,20 €
0,70 € 70,00 €
0,555 € 277,50 €
0,513 € 513,00 €
0,48 € 960,00 €
Full Reel (Order in multiples of 4000)
0,48 € 1.920,00 €

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
N-Channel
1 Channel
500 V
2 A
3 Ohms
- 25 V, 25 V
5.5 V
9.1 nC
- 55 C
+ 150 C
2 W
Enhancement
Reel
Cut Tape
Brand: onsemi
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MY
Product Type: MOSFETs
Series: FDT4N50NZU
Factory Pack Quantity: 4000
Subcategory: Transistors
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

FDT4N50NZU UniFET II MOSFET

onsemi FDT4N50NZU UniFET II MOSFET is a high voltage MOSFET based on advanced planar stripe and DMOS technology. The MOSFET has a small on-state resistance among the planar MOSFET. It provides superior switching performance and higher avalanche energy strength. An internal gate-source ESD diode allows the UniFET II MOSFET to withstand over 2kV HBM surge stress.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.