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RFN10BGE3STL

Name: ROHM Semiconductor RFN10BGE3STL
Brand: ROHM Semiconductor
SKU: 755-RFN10BGE3STL
Price: 1.16 EUR
Availability: InStock

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Mouser No:

755-RFN10BGE3STL

Mfr. No:

RFN10BGE3STL

Mfr.:

ROHM Semiconductor

Description:

Rectifiers RECT 350V 10A SM SUPER FST

Datasheet:

RFN10BGE3STL Datasheet (PDF)

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RFN10BGE3STL

In Stock: 3.657

Stock:: 3.657 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,16 €	1,16 €
	0,739 €	7,39 €
	0,622 €	62,20 €
	0,49 €	245,00 €
	0,448 €	448,00 €
Full Reel (Order in multiples of 2500)
	0,418 €	1.045,00 €
	0,413 €	2.065,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	Rectifiers
RoHS:
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	TO-252GE-3
Vr - Reverse Voltage:	350 V
If - Forward Current:	10 A
Type:	Super Fast Recovery Diode
Configuration:	Single
Vf - Forward Voltage:	1.5 V
Max Surge Current:	80 A
Ir - Reverse Current:	10 uA
Recovery Time:	30 ns
Maximum Operating Temperature:	+ 150 C
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Product:	Rectifiers
Product Type:	Rectifiers
Factory Pack Quantity:	2500
Subcategory:	Diodes & Rectifiers
Part # Aliases:	RFN10BGE3S

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Datasheet

RFN10BGE3STL Datasheet (PDF)

PCN

Product Change Notification 2024-07-15 (PDF)

Specification Sheets

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TARIC:: 8541100000
CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
ECCN:: EAR99

RFN10BGE3STL Super Fast Recovery Diode

ROHM Semiconductor RFN10BGE3STL Super Fast Recovery Diode features silicon epitaxial planar construction with high current overload capacity and low switching loss. This superfast recovery diode is stored at -55°C to 150°C temperature range and offers 350V repetitive peak reverse voltage. The RFN10BGE3STL diode functions at 10A average rectified forward current, 1.5V maximum forward voltage, 10μA maximum reverse current, and 150°C junction temperature. This diode is ideal for use in general rectification.