TRSxE65F SiC Schottky Barrier Diodes

Toshiba TRSxE65F SiC Schottky Barrier Diodes exhibit the chip design of 2nd generation and come in TRS6E65F and TRS8E65F variants. The TRSxE65F diodes feature high surge current, small junction capacitance, and small reverse current. These diodes are available in 10.05mm x 15.3mm x 4.45mm dimensions. The Toshiba TRSxE65F Schottky barrier diodes are ideal for power factor correction, uninterruptible power supplies, and DC-DC converters.

Results: 7
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Configuration If - Forward Current Vrrm - Repetitive Reverse Voltage Vf - Forward Voltage Ifsm - Forward Surge Current Ir - Reverse Current Maximum Operating Temperature Packaging
Toshiba SiC Schottky Diodes V=650 IF=8A 7In Stock
Min.: 1
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Through Hole TO-220-2 Single 8 A 650 V 1.45 V 69 A 400 nA + 175 C Tube
Toshiba SiC Schottky Diodes RECT 650V 2A RDL SIC SKY 5In Stock
300Expected 6/8/2026
Min.: 1
Mult.: 1

Through Hole TO-220F-2L Single 2 A 650 V 1.45 V 21 A 200 nA + 175 C Tube
Toshiba SiC Schottky Diodes RECT 650V 10A RDL SIC SKY Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Through Hole TO-220F-2L Single 10 A 650 V 1.45 V 83 A 500 nA + 175 C Tube
Toshiba SiC Schottky Diodes RECT 650V 12A RDL SIC SKY Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Through Hole TO-220F-2L Single 12 A 650 V 1.45 V 97 A 600 nA + 175 C Tube
Toshiba SiC Schottky Diodes RECT 650V 3A RDL SIC SKY Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Through Hole TO-220F-2L Single 3 A 650 V 1.45 V 27 A 200 nA + 175 C Tube
Toshiba SiC Schottky Diodes RECT 650V 4A RDL SIC SKY Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Through Hole TO-220F-2L Single 4 A 650 V 1.45 V 39 A 200 nA + 175 C Tube
Toshiba SiC Schottky Diodes V=650 IF=6A Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Through Hole TO-220-2 Single 6 A 650 V 1.45 V 55 A 300 nA + 175 C Tube