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TK095N65Z5,S1F

Name: Toshiba TK095N65Z5,S1F
Brand: Toshiba
SKU: 757-TK095N65Z5S1F
Price: 5.95 EUR
Availability: InStock

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Mouser No:

757-TK095N65Z5S1F

Mfr. No:

TK095N65Z5,S1F

Mfr.:

Toshiba

Description:

MOSFETs 650V DTMOS6-HSD TO-247 95mohm

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

TK095N65Z5,S1F Datasheet (PDF)

ECAD Model:

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Learn more about Toshiba TK095N65Z5,S1F

In Stock: 30

Stock:: 30 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,95 €	5,95 €
	4,02 €	40,20 €
	3,37 €	404,40 €
	3,20 €	1.632,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	29 A
Rds On - Drain-Source Resistance:	95 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	50 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	230 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	40 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	95 ns
Typical Turn-On Delay Time:	75 ns

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Datasheet

TK095N65Z5,S1F Datasheet (PDF)

Application Notes

Models

Product Catalogs

Selection Guide 2025 - MOSFETs

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

TK095N65Z5 Silicon N-Channel (DTMOSVI) MOSFET

Toshiba TK095N65Z5 Silicon N-Channel (DTMOSVI) MOSFET is a 650V, 95mΩ high-speed MOSFET in a TO-247 package. Designed for use in switching voltage regulator applications, TK095N65Z5 offers a fast recovery time (115ns typical) and a low drain-source on-resistance (0.079Ω typical). This MOSFET provides high-speed switching properties with a low capacitance.

DTMOSVI MOSFETs

Toshiba DTMOSVI MOSFETs offer a low drain-source on-resistance of 0.033Ω (typical), a drain-source voltage of 650V, and a drain current of 57A. The DTMOSVI MOSFETs offer high-speed switching properties with lower capacitance. These MOSFETs are ideal for use in switching power supply applications.