BC846B-Q

Diotec Semiconductor
637-BC846B-Q
BC846B-Q

Mfr.:

Description:
Bipolar Transistors - BJT BJT, SOT-23, 65V, 100mA, NPN, 0.25W, 150C

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 3.000

Stock:
3.000 Can Dispatch Immediately
Factory Lead Time:
10 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
0,086 € 0,09 €
0,053 € 0,53 €
0,045 € 4,50 €
0,035 € 17,50 €
0,031 € 31,00 €
0,023 € 57,50 €
10.000 Quote

Product Attribute Attribute Value Select Attribute
Diotec Semiconductor
Product Category: Bipolar Transistors - BJT
RoHS:  
Si
SMD/SMT
SOT-23-3
NPN
Single
100 mA
65 V
80 V
6 V
200 mV
250 mW
300 MHz
- 55 C
+ 150 C
Reel
Brand: Diotec Semiconductor
Continuous Collector Current: 100 mA
DC Current Gain hFE Max: 800 V
Product Type: BJTs - Bipolar Transistors
Subcategory: Transistors
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TARIC:
8541210000
USHTS:
8541290095
ECCN:
EAR99

BC846B-Q SMD General-Purpose NPN Transistor

Diotec Semiconductor BC846B-Q SMD General-Purpose NPN Transistor features three current gain groups in a SOT-23 package and complies with RoHS and REACH. This transistor operates at 65V collector-emitter voltage, 80V collector-base voltage, 6V emitter-base voltage, and 200mA peak collector current. The BC846B-Q NPN transistor utilizes bond wires for commercial grades and AU bond wires for all other grades. The commercial-grade transistor features 200mW commercial-grade power dissipation with <625K/W thermal resistance junction to ambient. The industrial-grade transistor features 250mW commercial-grade power dissipation with <420K/W thermal resistance junction to ambient. The BC846B-Q NPN transistor is housed in a UL 94V-0 case material and available in a small SOT-363 Surface-Mount Device (SMD) package. This NPN transistor is ideal for signal processing, switching, amplification, and commercial and industrial-grade use.