ART LDMOS RF Power Transistors

Ampleon Advanced Rugged Technology (ART) LDMOS RF Power Transistors are designed to cover a wide range of applications for ISM, broadcast, and communications. These power transistors feature dual-sided ESD protection, enabling class C operation and complete switch-off. The ART LDMOS RF power transistors offer high efficiency, excellent thermal stability, and excellent ruggedness with no device degradation. These power transistors feature nominal output powers of 35W and 2500W. The ART LDMOS RF power transistors are ideal for industrial, scientific, medical, broadcast, and radar applications.

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Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Transistor Polarity Technology Vds - Drain-Source Breakdown Voltage Rds On - Drain-Source Resistance Operating Frequency Gain Output Power Maximum Operating Temperature Mounting Style Package/Case Packaging


Ampleon RF MOSFET Transistors ART35FE/SOT467C/TRAY 237In Stock
Min.: 1
Mult.: 1

N-Channel LDMOS 65 V 1.6 Ohms 1 MHz to 650 MHz 31 dB 35 W + 225 C Screw Mount SOT467C-3 Tray
Ampleon RF MOSFET Transistors ART2K5TPU/OMP-1230-6F/T&R Non-Stocked Lead-Time 16 Weeks
Min.: 100
Mult.: 100
: 100

Dual N-Channel LDMOS 75 V 106 mOhms 1 MHz to 400 MHz 28..5 dB 2.5 kW + 225 C SMD/SMT OMP-1230-6F-2-7 Reel