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NTBG014N120M3P

Name: onsemi NTBG014N120M3P
Brand: onsemi
SKU: 863-NTBG014N120M3P
Price: 23.77 EUR
Availability: InStock

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Mouser No:

863-NTBG014N120M3P

Mfr. No:

NTBG014N120M3P

Mfr.:

onsemi

Description:

SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L

Datasheet:

NTBG014N120M3P Datasheet

ECAD Model:

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More Information

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In Stock: 967

Stock:: 967 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	23,77 €	23,77 €
	19,30 €	193,00 €
	18,86 €	9.430,00 €
Full Reel (Order in multiples of 800)
	18,28 €	14.624,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	104 A
Rds On - Drain-Source Resistance:	20 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.63 V
Qg - Gate Charge:	337 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	454 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Fall Time:	14 ns
Forward Transconductance - Min:	29 S
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	SiC MOSFETS
Rise Time:	40 ns
Series:	NTBG014N120M3P
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	74 ns
Typical Turn-On Delay Time:	24 ns

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Datasheet

NTBG014N120M3P Datasheet

PCN

Product Change Notification 2024-06-26 (PDF)

Material Composition Disclosure

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

M3P EliteSiC MOSFETs

onsemi M3P EliteSiC MOSFETs are a solution for high-voltage applications with a maximum voltage rating of 1200V. The onsemi M3P MOSFETs come in D2PAK7, TO-247-3LD, and TO-247-4LD packages/ The MOSFETs provide versatility for various design requirements. With a maximum gate-to-source voltage of +22V/-10V, EliteSiC MOSFETs boast improved parasitic capacitances, including Coss, Ciss, and Crss.

NTBG014N120M3P Silicon Carbide (SiC) MOSFET

onsemi NTBG014N120M3P Silicon Carbide (SiC) MOSFET is part of the 1200V M3P planar SiC MOSFETs family. The onsemi MOSFETs are optimised for power applications. Planar technology works reliably with negative gate voltage drives and turns off spikes on the gate. This family provides optimum performance when driven with an 18V gate drive, but also works well with a 15V gate drive.