RJ1N04BBHTL1

ROHM Semiconductor
755-RJ1N04BBHTL1
RJ1N04BBHTL1

Mfr.:

Description:
MOSFETs Nch 80V 100A, TO-263AB, Power MOSFET

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 772

Stock:
772 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,66 € 3,66 €
2,41 € 24,10 €
1,81 € 181,00 €
1,60 € 800,00 €
Full Reel (Order in multiples of 800)
1,42 € 1.136,00 €

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
TO-263AB-3
N-Channel
1 Channel
80 V
100 A
5.3 mOhms
20 V
4 V
46 nC
- 55 C
+ 150 C
89 W
Enhancement
Reel
Cut Tape
Brand: ROHM Semiconductor
Configuration: Single
Fall Time: 38 ns
Forward Transconductance - Min: 20 S
Product Type: MOSFETs
Rise Time: 14 ns
Factory Pack Quantity: 800
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 65 ns
Typical Turn-On Delay Time: 30 ns
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

125°C I2C BUS EEPROMs for 2-Wire Automotive

ROHM Semiconductor 125°C I2C BUS EEPROMs for 2-Wire Automotive are AEC-Q100 qualified. The ROHM I2C BUS EEPROMs feature two ports of Serial Clock (SCL) and Serial Data (SDA) that all controls are available through. The EEPROMs operate from a wide limit of 1.7V to 5.5V, with a possible 1MHz operation.

RJ1N04BBH N-Ch Power MOSFET

ROHM Semiconductor RJ1N04BBH N-Ch Power MOSFET offers an 80V drain-source voltage with low on-resistance. The device features a ±100A continuous drain current and 89W power dissipation. The RJ1N04BBH is suitable for many applications, including switching, motor drives, and DC/DC converters. The ROHM RJ1N04BBH MOSFET is available in a high-power TO263AB package.