TDS2621LP.C

Semtech
947-TDS2621LP.C
TDS2621LP.C

Mfr.:

Description:
ESD Protection Diodes / TVS Diodes TDS, 1-Line 26V 24A TVS EOS SLP1616N2P

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 2.455

Stock:
2.455 Can Dispatch Immediately
Factory Lead Time:
5 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,08 € 1,08 €
0,708 € 7,08 €
0,587 € 58,70 €
0,563 € 281,50 €
0,544 € 544,00 €
0,516 € 1.548,00 €

Product Attribute Attribute Value Select Attribute
Semtech
Product Category: ESD Protection Diodes / TVS Diodes
RoHS:  
DFN-2
Brand: Semtech
Breakdown Voltage: 31 V
Cd - Diode Capacitance: 86 pF
Clamping Voltage: 35 V
Ipp - Peak Pulse Current: 24 A
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
Pppm - Peak Pulse Power Dissipation: 840 W
Factory Pack Quantity: 3000
Subcategory: ESD Protection Diodes / TVS Diodes
Termination Style: SMD/SMT
Tradename: SurgeSwitch
Vesd - Voltage ESD Air Gap: 25 kV
Vesd - Voltage ESD Contact: 20 kV
Vf - Forward Voltage: 600 mV
Working Voltage: 26.4 V
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Attributes selected: 0

Compliance Codes
TARIC:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

TDS2621LP Transient Diverting Suppressors (TDS)

Semtech TDS2621LP Transient Diverting Suppressors (TDS) are designed to provide high-energy electrical overstress (EOS) protection with superior clamping and temperature characteristics when compared to standard TVS devices. The Semtech TDS2621LP devices use a surge-rated FET as the main protection element. During an EOS event, transient voltage increases beyond the rated breakdown voltage of the device. The FET then switches on and conducts a transient current to ground. The TDS clamping voltage is nearly constant across the rated peak pulse current range due to the extremely low ON Resistance [RDS(on)] of the FET. Lower clamping voltage at maximum peak pulse current makes the TDS components more suitable for protecting sensitive integrated circuits (ICs), when compared to standard TVS diodes.