SiC641CD-T1-GE3

Vishay Semiconductors
78-SIC641CD-T1-GE3
SiC641CD-T1-GE3

Mfr.:

Description:
Power Management Specialised - PMIC 55A DrMOS 5V PWM PowerPAK (MLP31-55)

Datasheet:
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Learn more about Vishay Semiconductors SiC641CD-T1-GE3

In Stock: 3.000

Stock:
3.000 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
2,52 € 2,52 €
1,89 € 18,90 €
1,73 € 43,25 €
1,56 € 156,00 €
1,47 € 367,50 €
1,44 € 720,00 €
1,37 € 1.370,00 €
Full Reel (Order in multiples of 3000)
1,32 € 3.960,00 €
1,31 € 7.860,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: Power Management Specialised - PMIC
RoHS:  
REACH - SVHC:
SIC
General Purpose
SMD/SMT
MLP55-31
16 V
2.5 V
- 40 C
+ 125 C
55 A
Reel
Cut Tape
MouseReel
Application: Computers
Brand: Vishay Semiconductors
Development Kit: SiC641DB
Input Voltage Range: 2.5 V to 16 V
Operating Supply Current: 120 uA
Operating Supply Voltage: 5 V
Product: Power Management Specialized - PMICs
Product Type: Power Management Specialized - PMIC
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Tradename: DrMOS
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Attributes selected: 0

Datasheet

PCN

Compliance Codes
TARIC:
8542399000
USHTS:
8542390090
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

DrMOS SiC6xx Series Integrated Power Stage

Vishay Semiconductors DrMOS SiC6xx Integrated Power Stage are optimized for synchronous buck applications to offer high current, high efficiency, and high power density performance. Packaged in Vishay's proprietary 5mm x 5mm MLP package, SiC6xx enables the voltage regulator designs to deliver up to 60A continuous current per phase. The internal power MOSFETs utilizes Vishay's state-of-the-art Gen IV TrenchFET technology that delivers industry benchmark performance to significantly reduce switching and conduction losses. 

The SiC6xx incorporates an advanced MOSFET gate driver IC that features high current driving capability, adaptive dead-time control, an integrated bootstrap Schottky diode, a thermal warning (THWn) that alerts the system of excessive junction temperature, and zero current detect to improve light load efficiency. The drivers are also compatible with a wide range of PWM controllers and supports tri-state PWM, 3.3V (SiC620A) / 5V (SiC620) PWM logic.
Learn More

SiC641 55A VRPower® Integrated Power Stage

Vishay Semiconductors SiC641 55A VRPower® Integrated Power Stage is designed for synchronous buck applications, delivering high current, efficiency, and power density with minimal shutdown current. The Vishay Semiconductors SiC641 is housed in a proprietary 5mm x 5mm MLP package. The SiC641 supports voltage regulators with up to 55A continuous current per phase. Featuring Vishay’s advanced TrenchFET® technology, these devices minimize switching and conduction losses for industry-leading performance.

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