It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NJVMJD45H11G

Name: onsemi NJVMJD45H11G
Brand: onsemi
SKU: 863-NJVMJD45H11G
Price: 1.17 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-NJVMJD45H11G

Mfr. No:

NJVMJD45H11G

Mfr.:

onsemi

Description:

Bipolar Transistors - BJT BIP DPAK PNP 8A 80V

Datasheet:

NJVMJD45H11G Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NJVMJD45H11G

In Stock: 2.212

Stock:: 2.212 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,17 €	1,17 €
	1,05 €	10,50 €
	0,458 €	34,35 €

Alternative Packaging

Mfr. Part No.:

NJVMJD45H11T4G-VF01

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

1,31 €

Min:

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Bipolar Transistors - BJT
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	PNP
Configuration:	Single
Maximum DC Collector Current:	8 A
Collector- Emitter Voltage VCEO Max:	80 V
Emitter- Base Voltage VEBO:	5 V
Collector-Emitter Saturation Voltage:	1 V
Pd - Power Dissipation:	20 W
Gain Bandwidth Product fT:	90 MHz
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Qualification:	AEC-Q101
Series:	MJD45H11
Packaging:	Tube
Brand:	onsemi
Country of Assembly:	VN
Country of Diffusion:	MY
Country of Origin:	MY
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	75
Subcategory:	Transistors
Unit Weight:	350 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NJVMJD45H11G Datasheet

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

NJVMJD45H11G Bipolar Junction Transistor

onsemi NJVMJD45H11G Bipolar Junction Transistor (BJT) is a fast switching device with low collector-emitter saturation voltage. The electrical characteristics of NJVMJD45H11G transistor include 8A current, 80V voltage, and 20W power. This transistor is electrically similar to D44H/D45H series. onsemi NJVMJD45H11G is available in a straight lead version in plastic sleeves along with complementary pairs to simplify designs. This transistor is used for general-purpose power and switching devices. The applications include switching regulators, converters, and power amplifiers.