STPSC20G12 Silicon Carbide Power Schottky Diodes

STMicroelectronics STPSC20G12 Silicon Carbide Power Schottky Diodes are available in a DO-247 package with long leads. The STMicroelectronics STPSC20G12 is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200V rating. Thanks to the Schottky construction, no recovery is shown during turn-off, and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Configuration
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
STMicroelectronics SiC Schottky Diodes Automotive 1200 V, 20A power Schottky High Surge silicon carbide diode
Datasheet
114In Stock
600Expected 3/9/2026
MouseReel Available
Min.: 1
Mult.: 1
Reel: 600

SMD/SMT HU3PAK-9 Single 20 A 1.2 kV 1.35 V 1.1 kA 10 uA - 55 C + 175 C AEC-Q101 Reel, Cut Tape, MouseReel
STMicroelectronics SiC Schottky Diodes 1200 V, 20 A High surge Silicon Carbide Power Schottky Diode
Datasheet
878In Stock
Min.: 1
Mult.: 1

Through Hole DO-247-2 Single 20 A 1.2 kV 1.35 V 180 A 10 uA - 55 C + 175 C Tube
STMicroelectronics SiC Schottky Diodes Automotive 1200 V, 20A power Schottky High Surge silicon carbide diode
Datasheet
49In Stock
Min.: 1
Mult.: 1

Through Hole DO-247-2 Single 20 A 1.2 kV 1.35 V 180 A 10 uA - 55 C + 175 C AEC-Q101 Tube