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PMDXB950UPELZ

Name: Nexperia PMDXB950UPELZ
Brand: Nexperia
SKU: 771-PMDXB950UPELZ
Price: 0.76 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

771-PMDXB950UPELZ

Mfr. No:

PMDXB950UPELZ

Mfr.:

Nexperia

Description:

MOSFETs The factory is currently not accepting orders for this product.

Datasheet:

PMDXB950UPELZ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia PMDXB950UPELZ

In Stock: 1.977

Stock:: 1.977

Can Dispatch Immediately

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On Order:: 10.000

Expected 4/5/2027
Factory Lead Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,765 €	0,77 €
	0,51 €	5,10 €
	0,323 €	32,30 €
	0,20 €	100,00 €
	0,148 €	148,00 €
	0,135 €	337,50 €
Full Reel (Order in multiples of 5000)
	0,114 €	570,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-1010-6
Transistor Polarity:	P-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	500 mA
Rds On - Drain-Source Resistance:	5 Ohms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	950 mV
Qg - Gate Charge:	2.1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	380 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Nexperia
Configuration:	Dual
Product Type:	MOSFETs
Factory Pack Quantity:	5000
Subcategory:	Transistors
Part # Aliases:	934070431147
Unit Weight:	1,200 mg

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Attributes selected: 0

                        
The factory is currently not accepting orders for this product.

Filter Document:

TARIC:: 8541210000
CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 8541210101
KRHTS:: 8541219000
MXHTS:: 85412101
ECCN:: EAR99

PMDXBx 20V Trench MOSFETs

Nexperia PMDXBx 20V Trench MOSFETs consist of enhancement mode field-effect transistors (FET) in leadless, ultra-small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic packages. The devices employ Trench MOSFET technology, have an exposed drain pad for excellent thermal conduction, provide >1kV HBM ESD protection, and offer 470mΩ drain-source on-state resistance. The PMDXBx MOSFETs are available in dual N- and P-channel versions. The Nexperia PMDXBx 20V Trench MOSFETs are ideal for relay drivers, high-speed line drivers, low-side load switches, and switching circuits.