3rd Generation Silicon Carbide MOSFETs

Toshiba 3rd Generation Silicon Carbide MOSFETs are designed for high-power industrial applications like 400V AC input AC-DC power supplies. Other applications include photovoltaic (PV) inverters, and bi-directional DC-DC converters for uninterruptible power supplies (UPS). These MOSFETs contribute to reducing power consumption and improving power density. This is due to SiC technology which allows devices to deliver higher voltages, faster switching, and lower On-resistance. Toshiba’s third generation chip design offers enhanced reliability in addition to input capacitance (CISS) of 4850pF (typical), a low gate-input charge (Qg) of 128nC (typical), and a drain-to-source On-resistance (RDS(ON)) of just 15mΩ or 30mΩ (typical).

Results: 24
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Toshiba SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.031 Ohma.18 V, DFN 8 x 8, 3rd Gen.
Datasheet
2.500In Stock
Min.: 1
Mult.: 1
: 2.500

SMD/SMT DFN-5 N-Channel 1 Channel 650 V 53 A 45 mOhms - 10 V, 25 V 5 V 65 nC + 175 C 156 W Enhancement
Toshiba SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.054 Ohma.18 V, DFN 8 x 8, 3rd Gen.
Datasheet
2.480In Stock
Min.: 1
Mult.: 1
: 2.500

SMD/SMT DFN-5 N-Channel 1 Channel 650 V 36 A 81 mOhms - 10 V, 25 V 5 V 41 nC + 175 C 132 W Enhancement
Toshiba SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.092 Ohma.18 V, DFN 8 x 8, 3rd Gen.
Datasheet
2.493In Stock
Min.: 1
Mult.: 1
: 2.500

SMD/SMT DFN-5 N-Channel 1 Channel 650 V 27 A 136 mOhms - 10 V, 25 V 5 V 28 nC + 175 C 111 W Enhancement
Toshiba SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.123 Ohma.18 V, DFN 8 x 8, 3rd Gen.
Datasheet
2.500In Stock
Min.: 1
Mult.: 1
: 2.500

SMD/SMT DFN-5 N-Channel 1 Channel 650 V 18 A 183 mOhms - 10 V, 25 V 5 V 21 nC + 175 C 76 W Enhancement
Toshiba SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 45mohm
Datasheet
50In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 40 A 45 mOhms - 10 V, + 25 V 5 V 57 nC + 175 C 182 W Enhancement
Toshiba SiC MOSFETs G3 1200V SiC-MOSFET TO-247 15mohm
Datasheet
31In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 100 A 182 mOhms - 10 V, + 25 V 5 V 158 nC - 55 C + 175 C 431 W Enhancement
Toshiba SiC MOSFETs G3 650V SiC-MOSFET TO-247 15mohm
Datasheet
49In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 100 A 21 mOhms - 10 V, + 25 V 5 V 128 nC - 55 C + 175 C 342 W Enhancement
Toshiba SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 15mohm
Datasheet
142In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 100 A 15 mOhms - 10 V, + 25 V 5 V 128 nC + 175 C 342 W Enhancement
Toshiba SiC MOSFETs G3 1200V SiC-MOSFET TO-247 30mohm
Datasheet
67In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 40 mOhms - 10 V, + 25 V 5 V 82 nC - 55 C + 175 C 249 W Enhancement
Toshiba SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 30mohm
Datasheet
35In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 60 A 30 mOhms - 10 V, + 25 V 5 V 82 nC + 175 C 249 W Enhancement
Toshiba SiC MOSFETs G3 1200V SiC-MOSFET TO-247 45mohm
Datasheet
111In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 40 A 182 mOhms - 10 V, + 25 V 5 V 57 nC - 55 C + 175 C 182 W Enhancement
Toshiba SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 48mohm
Datasheet
52In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 40 A 48 mOhms - 10 V, + 25 V 5 V 41 nC + 175 C 132 W Enhancement
Toshiba SiC MOSFETs G3 1200V SiC-MOSFET TO-247 60mohm
Datasheet
214In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 36 A 182 mOhms - 10 V, + 25 V 5 V 46 nC - 55 C + 175 C 170 W Enhancement
Toshiba SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 60mohm
Datasheet
36In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 36 A 60 mOhms - 10 V, + 25 V 5 V 46 nC + 175 C 170 W Enhancement
Toshiba SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 140mohm
Datasheet
61In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 20 A 140 mOhms - 10 V, + 25 V 5 V 24 nC + 175 C 107 W Enhancement
Toshiba SiC MOSFETs G3 650V SiC-MOSFET TO-247 107mohm
Datasheet
30In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 20 A 113 mOhms - 10 V, + 25 V 5 V 28 nC - 55 C + 175 C 111 W Enhancement
Toshiba SiC MOSFETs G3 650V SiC-MOSFET TO-247 27mohm
Datasheet
4In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 58 A 37 mOhms - 10 V, + 25 V 5 V 65 nC - 55 C + 175 C 156 W Enhancement
Toshiba SiC MOSFETs G3 650V SiC-MOSFET TO-247 83mohm
Datasheet
15In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 20 A 145 mOhms - 10 V, + 25 V 5 V 21 nC - 55 C + 175 C 76 W Enhancement
Toshiba SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 83mohm
Datasheet
25In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 30 A 83 mOhms - 10 V, + 25 V 5 V 28 nC + 175 C 111 W Enhancement
Toshiba SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 107mohm
Datasheet
40In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 20 A 107 mOhms - 10 V, + 25 V 5 V 21 nC + 175 C 76 W Enhancement
Toshiba SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 15mohm
Datasheet
20Expected 6/22/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 100 A 15 mOhms - 10 V, + 25 V 5 V 158 nC + 175 C 431 W Enhancement
Toshiba SiC MOSFETs G3 1200V SiC-MOSFET TO-247 140mohm
Datasheet
176Expected 7/17/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 20 A 182 mOhms - 10 V, + 25 V 5 V 24 nC - 55 C + 175 C 107 W Enhancement
Toshiba SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 27mohm
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 58 A 27 mOhms - 10 V, + 25 V 5 V 65 nC + 175 C 156 W Enhancement
Toshiba SiC MOSFETs G3 650V SiC-MOSFET TO-247 48mohm
Datasheet
Non-Stocked Lead-Time 25 Weeks
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 40 A 65 mOhms - 10 V, + 25 V 5 V 41 nC - 55 C + 175 C 132 W Enhancement