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Qty. RoHS ECAD Model Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Microchip Technology IGBT Modules PM-IGBT-SBD-BL3
Datasheet
12In Stock
Min.: 1
Mult.: 1
IGBT Modules Full Bridge 1.2 kV 2.4 V 160 A 150 nA 470 W - 55 C + 175 C
Microchip Technology IGBT Modules PM-IGBT-SBD-BL3
Datasheet
4In Stock
Min.: 1
Mult.: 1

IGBT Modules Double Dual Common Source 1.2 kV 2.4 V 160 A 150 nA 470 W - 55 C + 175 C
Microchip Technology IGBT Modules PM-IGBT-SBD-BL2
Datasheet
1In Stock
Min.: 1
Mult.: 1
IGBT Modules Full Bridge 1.2 kV 2.4 V 110 A 150 nA 375 W - 55 C + 175 C
Microchip Technology IGBT Modules PM-IGBT-SBD-BL1
Datasheet
9In Stock
Min.: 1
Mult.: 1
IGBT Modules Half Bridge 1.2 kV 2.4 V 110 A 150 nA 375 W - 55 C + 175 C
Microchip Technology IGBT Modules PM-IGBT-SBD-BL2
Datasheet
7In Stock
Min.: 1
Mult.: 1
IGBT Modules Asymmetrical Bridge 1.2 kV 2.4 V 110 A 150 nA 375 W - 55 C + 175 C
Microchip Technology IGBT Modules PM-IGBT-SBD-BL1
Datasheet
6In Stock
Min.: 1
Mult.: 1
IGBT Modules Dual Common Source 1.2 kV 2.4 V 110 A 150 nA 375 W - 55 C + 175 C
Microchip Technology IGBT Modules PM-IGBT-SBD-BL2
Datasheet
6In Stock
Min.: 1
Mult.: 1
IGBT Modules Double Dual Common Source 1.2 kV 2.4 V 110 A 150 nA 375 W - 55 C + 175 C