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FDC642P-F085PBK

Name: onsemi FDC642P-F085PBK
Brand: onsemi
SKU: 863-FDC642P-F085PBK
Price: 0.42 EUR
Availability: InStock

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Mouser No:

863-FDC642P-F085PBK

Mfr. No:

FDC642P-F085PBK

Mfr.:

onsemi

Description:

MOSFETs PMOS SSOT6 20V 65 MOHM

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

FDC642P-F085PBK Datasheet

ECAD Model:

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Learn more about onsemi FDC642P-F085PBK

In Stock: 2.296

Stock:: 2.296 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	0,421 €	0,42 €
	0,266 €	2,66 €
	0,214 €	21,40 €
	0,205 €	102,50 €
	0,20 €	200,00 €
Full Reel (Order in multiples of 3000)
	0,195 €	585,00 €
	0,185 €	1.110,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SSOT-6
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	4 A
Rds On - Drain-Source Resistance:	65 mOhms
Vgs - Gate-Source Voltage:	8 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Qg - Gate Charge:	6.9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.2 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	KR
Country of Origin:	PH
Fall Time:	9.6 ns
Forward Transconductance - Min:	10 S
Product Type:	MOSFETs
Rise Time:	5.5 ns
Series:	FDC642P_F085
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	23.2 ns
Typical Turn-On Delay Time:	7.3 ns

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Datasheet

FDC642P-F085PBK Datasheet

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

FDC642P-F085 Small Signal MOSFET

onsemi FDC642P-F085 Small Signal MOSFET offers a high-performance trench technology for extremely low R_DS(on)and fast switching speed. This MOSFET features a typical low gate charge of 6.9nC, a drain-to-source voltage of -20V, a gate-to-source voltage of ±8V, and a power dissipation of 1.2W. The FDC642P-F085 small signal MOSFET is available in a SUPERSOT™-6 package, featuring a 72% smaller footprint than the standard SO-8 and a 1mm thick, low-profile design. This small-signal MOSFET is Pb-free, RoHS compliant, AEC-Q101 qualified, and PPAP capable. Typical applications include a load switch, battery protection, and power management.