IRF540N/Z Advanced HEXFET® Power MOSFETs

Infineon IRF540N/Z Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed, ruggedized device design, and 175°C junction operating temperature that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Results: 4
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Infineon Technologies MOSFETs MOSFT 100V 33A 44mOhm 47.3nC 13.679In Stock
9.100Expected 4/23/2026
Min.: 1
Mult.: 1
Reel: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 33 A 44 mOhms - 20 V, 20 V 2 V 47.3 nC - 55 C + 175 C 3.8 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFT 100V 36A 26.5mOhm 42nC Qg 3.898In Stock
19.000On Order
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 36 A 26.5 mOhms - 20 V, 20 V 2 V 42 nC - 55 C + 175 C 92 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 100V 36A 44mOhm 49.3nC LogLvl 1.118In Stock
Min.: 1
Mult.: 1
Reel: 800

Si SMD/SMT TO-262-3 N-Channel 1 Channel 100 V 36 A 63 mOhms - 16 V, 16 V 2 V 49.3 nC - 55 C + 175 C 3.8 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs N-Ch 100V 80A I2PAK-3 OptiMOS 3
2.000Expected 3/5/2026
Min.: 1
Mult.: 1

Si Through Hole TO-262-3 N-Channel 1 Channel 100 V 80 A 8.2 mOhms - 20 V, 20 V 2.7 V 55 nC - 55 C + 175 C 125 W Enhancement OptiMOS Tube