TGA2830 & TGA2975 GaN Power Amplifiers

Qorvo TGA2830 & TGA2975 GaN Power Amplifiers operate from 2.7GHz to 3.5GHz and are designed using Qorvo's 00.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) production process (QGaN25). The TGA2830 and TGA2975 can operate under both pulse and CW conditions and are ideally suited for commercial and defense related radar applications. Both RF ports on these devices have integrated DC blocking capacitors and are matched to 50Ω. 

Results: 4
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 Mfr.
Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Operating Frequency
Operating Supply Voltage
Operating Supply Current
Gain
Type
Mounting Style
Package/Case
Technology
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Qorvo RF Amplifier 2.7-3.5GHz 12W GaN PAE > 52% Gain 31dB
Datasheet
358In Stock
Min.: 1
Mult.: 1

2.7 GHz to 3.5 GHz 20 V to 32 V 175 mA 31 dB Power Amplifiers SMD/SMT QFN-24 GaN - 40 C + 85 C TGA2975 Waffle
Qorvo RF Amplifier 2.7-3.5GHz 18W GaN PAE >54% Gain 30.5dB
Datasheet
22In Stock
Min.: 1
Mult.: 1

2.7 GHz to 3.5 GHz 20 V to 32 V 225 mA 30.5 dB Power Amplifiers SMD/SMT QFN-24 GaN SiC - 40 C + 85 C TGA2830 Waffle
Qorvo RF Amplifier 2.7-3.5 GHz, 18 W GaN PA
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 500
Mult.: 500
: 500
2.7 GHz to 3.5 GHz 30.5 dB SMD/SMT QFN-24 GaN SiC - 40 C + 85 C TGA2830 Reel
Qorvo TGA2975-SMTR7
Qorvo RF Amplifier 2.7-3.5 GHz, 12 W GaN PA
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 250
Mult.: 250
: 250

TGA2975 Reel