HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
Packaging
IXYS MOSFETs Trench T2 HiperFET Power MOSFET
Datasheet
1.547In Stock
Min.: 1
Mult.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 100 V 320 A 3.5 mOhms - 20 V, 20 V 4 V 430 nC - 55 C + 175 C 1 kW Enhancement HiPerFET Tube

IXYS MOSFETs 52 Amps 300V 0.066 Rds
Datasheet
2.897In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 52 A 73 mOhms - 20 V, 20 V 5 V 110 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube
IXYS MOSFETs N-Channel: Power MOSFET w/Fast Diode
Datasheet
1.540In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 150 A 19 mOhms - 20 V, 20 V 3 V 197 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFETs TO220 200V 72A N-CH X3CLASS
Datasheet
3.504In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 72 A 20 mOhms - 20 V, 20 V 2.5 V 55 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFETs 230A 200V
Datasheet
827In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 230 A 7.5 mOhms - 20 V, 20 V 5 V 358 nC - 55 C + 175 C 1.67 kW Enhancement HiPerFET Tube
IXYS MOSFETs 10 Amps 800V 1.1 Rds
Datasheet
8.854In Stock
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 10 A 1.1 Ohms - 30 V, 30 V 3 V 40 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube

IXYS MOSFETs MOSFET
Datasheet
1.148In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 64 A 96 mOhms - 30 V, 30 V 5 V 200 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube
IXYS MOSFETs TRENCHT2 PWR MOSFET 75V 520A
Datasheet
1.191In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 75 V 520 A 2.2 mOhms - 20 V, 20 V 5 V 545 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube

IXYS MOSFETs PolarP2 Power MOSFET
Datasheet
793In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 94 A 55 mOhms - 30 V, 30 V 3 V 228 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFETs 1000V 32A TO-264 Power MOSFET
Datasheet
194In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 32 A 220 mOhms - 30 V, 30 V 3.5 V 130 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET
Datasheet
186In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 40 V 600 A 1.5 mOhms - 20 V, 20 V 1.5 V 590 nC - 55 C + 175 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs PolarP2 Power MOSFET
Datasheet
178In Stock
300Expected 11/3/2026
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 94 A 55 mOhms - 30 V, 30 V 3 V 228 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFETs Trench HiperFET Power MOSFET
Datasheet
132In Stock
300Expected 11/23/2026
Min.: 1
Mult.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 94 A 36 mOhms HiPerFET Tube
IXYS MOSFETs 100 Amps 500V 0.05 Ohms Rds
Datasheet
457In Stock
Min.: 1
Mult.: 1

Si Through Hole PLUS-264-3 N-Channel 1 Channel 500 V 100 A 49 mOhms - 30 V, 30 V 5 V 240 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube

IXYS MOSFETs 500V 80A
Datasheet
207In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 80 A 65 mOhms - 30 V, 30 V 3 V 197 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube
IXYS MOSFETs TO247 250V 120A N-CH X3CLASS
Datasheet
991In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 120 A 12 mOhms - 20 V, 20 V 2.5 V 122 nC - 55 C + 150 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs tbd Amps 500V 0.06 Ohms Rds
Datasheet
199In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 70 A 52 mOhms - 30 V, 30 V 5 V 240 nC - 55 C + 150 C 625 W Enhancement HiPerFET Tube
IXYS MOSFETs 250V/80A Ultra Junct ion X3-Class MOSFET
Datasheet
510In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 250 V 80 A 13 mOhms - 20 V, 20 V 2.5 V 83 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds
Datasheet
321In Stock
Min.: 1
Mult.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 900 V 24 A 420 mOhms - 30 V, 30 V 6.5 V 130 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFETs 200V, 60A current capacity, Ultra junction X4, TO-263 package, MOSFET
Datasheet
512In Stock
Min.: 1
Mult.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 60 A 21 mOhms - 20 V, 20 V 4.5 V 11 nC - 55 C + 175 C 250 W Enhancement X4-Class Tube

IXYS MOSFETs 500V 16A
Datasheet
2.819In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 16 A 400 mOhms - 30 V, 30 V 3 V 43 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube

IXYS MOSFETs Polar3 HiPerFET Power MOSFET
Datasheet
268In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 500 V 34 A 180 mOhms HiPerFET Tube

IXYS MOSFETs MOSFET 650V/46A Ultra Junction X2
Datasheet
391In Stock
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 76 mOhms - 30 V, 30 V 2.7 V 75 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 300V 72A N-CH X3CLASS
Datasheet
221In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 72 A 19 mOhms - 30 V, 30 V 2.5 V 82 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFETs 140 Amps 200V 0.018 Rds
Datasheet
295In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 140 A 18 mOhms - 20 V, 20 V 2.5 V 240 nC - 55 C + 175 C 830 W Enhancement HiPerFET Tube